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M25P128-VME6TGB
M25P128-VME6TGB
Flash M25P128-VME6TGB
Micron Technology
M25P128-VME6TGB
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Pin Count8
AutomotiveNo
Boot BlockNo
Lead ShapeNo Lead
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size256Kbyte x 64
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial-SPI
Package Height0.95(Max)
Package Length6
Number of Words16M
ProgrammabilityYes
Supplier PackageVDFPN EP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameDFN
Maximum Erase Time (S)250/Chip
Operating Current (mA)8
Address Bus Width (bit)1
Programming Voltage (V)8.5 to 9.5|2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)10000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)5/Page
Maximum Operating Frequency (MHz)54
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Serial-SPI 3.3V 128M-bit 16M x 8 8ns 8-Pin VDFPN EP T/R
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