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M28W160CB70N6E
M28W160CB70N6E
Flash M28W160CB70N6E
Micron Technology
M28W160CB70N6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size4Words
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 8|64Kbyte x 31
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words1M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)20
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockBottom
Maximum Erase Time (s)10/Main Block
Operating Current (mA)20
Address Bus Width (bit)20
Programming Voltage (V)2.7 to 3.6|11.4 to 12.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 1M x 16 70ns 48-Pin TSOP Tray
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