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M28W640HCT70ZB6E
M28W640HCT70ZB6E
Flash M28W640HCT70ZB6E
Micron Technology
M28W640HCT70ZB6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
PCB changed48
Part StatusObsolete
Timing TypeAsynchronous
Package Width6.39
Interface TypeParallel
Package Height1(Max)
Package Length10.5
Number of Words4M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)20
Program Current (mA)15
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)10/Block
Operating Current (mA)18
Address Bus Width (bit)22
Programming Voltage (V)2.7 to 3.6|12
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 64M-bit 4M x 16 70ns 48-Pin TFBGA Tray
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