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M29DW640F70ZE6E
M29DW640F70ZE6E
Flash M29DW640F70ZE6E
Micron Technology
M29DW640F70ZE6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size8/8/24/24Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 126|8Kbyte x 16
Timing TypeAsynchronous
ArchitectureSectored
Package Width6
Interface TypeParallel
Package Height0.9(Max)
Package Length8
Number of Banks4
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)400/Chip
Operating Current (mA)10
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6|12
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)400000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TFBGA Tray
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