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M29F040B55N6E
M29F040B55N6E
Flash M29F040B55N6E
Micron Technology
M29F040B55N6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Pin Count32
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportNo
PCB changed32
Part StatusObsolete
Sector Size64Kbyte x 8
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.5(Max)
Interface TypeParallel
Package Height1.05(Max)
Package Length8.1(Max)
Number of Words512K
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)4M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)55
Standard Package NameSOP
Maximum Erase Time (s)20/Chip
Operating Current (mA)15
Address Bus Width (bit)19
Programming Voltage (V)4.5 to 5.5
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)18000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 4M-bit 512K x 8 55ns 32-Pin TSOP T/R
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