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M29F200BB70N1
M29F200BB70N1
Flash M29F200BB70N1
Micron Technology
M29F200BB70N1
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTube
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 3|32Kbyte x 1|16Kbyte x 1|8Kbyte x 2
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words256K/128K
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)2M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockBottom
Maximum Erase Time (s)10/Chip
Operating Current (mA)20
Address Bus Width (bit)17
Programming Voltage (V)4.5 to 5.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)9000/Chip
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 2M-bit 256K x 8/128K x 16 70ns 48-Pin TSOP Tube
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