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M29F200BT-55N6
M29F200BT-55N6
Flash M29F200BT-55N6
STMicroelectronics
M29F200BT-55N6
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 3
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words256K/128K
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)2M
Command CompatibleNo
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)55
Standard Package NameSOP
Location of Boot BlockTop
Maximum Erase Time (S)10/Chip
Operating Current (mA)20
Address Bus Width (bit)18/17
Programming Voltage (V)5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)9000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 2M-bit 256K x 8/128K x 16 55ns 48-Pin TSOP
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