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M29F800DB70N6E
M29F800DB70N6E
Flash M29F800DB70N6E
Micron Technology
M29F800DB70N6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 15
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words1M/512K
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockBottom
Maximum Erase Time (s)60/Chip
Operating Current (mA)20
Address Bus Width (bit)20/19
Programming Voltage (V)4.5 to 5.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)60000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP Tray
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