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M29W008DT70N1E
M29W008DT70N1E
Flash M29W008DT70N1E
Micron Technology
M29W008DT70N1E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTube
Pin Count40
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed40
Part StatusObsolete
Sector Size64Kbyte x 15|32Kbyte x 1|16Kbyte x 1|8Kbyte x 2
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.5(Max)
Interface TypeParallel
Package Height1.05(Max)
Package Length10.1(Max)
Number of Words1M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleNo
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockTop
Maximum Erase Time (s)60/Chip
Operating Current (mA)10
Address Bus Width (bit)20
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)60000/Chip
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8 70ns 40-Pin TSOP Tube
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