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M29W128FL70ZA6E
M29W128FL70ZA6E
Flash M29W128FL70ZA6E
Micron Technology
M29W128FL70ZA6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTube
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size64Kbyte x 256
Timing TypeAsynchronous
ArchitectureSectored
Package Width10
Interface TypeParallel
Package Height0.8
Package Length13
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTBGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Maximum Erase Time (s)400/Chip
Operating Current (mA)10
Address Bus Width (bit)24/23
Programming Voltage (V)11.5 to 12.5|2.7 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)30
Maximum Programming Time (ms)400000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tube
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