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M29W128GL70ZA6DE
M29W128GL70ZA6DE
Flash M29W128GL70ZA6DE
Micron Technology
M29W128GL70ZA6DE
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size16byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Timing TypeAsynchronous
Package Width10
Interface TypeParallel
Package Height0.8
Package Length13
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTBGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)400/Chip
Page Read Current (mA)15
Address Bus Width (bit)23
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
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