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M29W128GL70ZA6E
M29W128GL70ZA6E
Flash M29W128GL70ZA6E
Micron Technology
M29W128GL70ZA6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size8Words/16byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width10
Interface TypeParallel
Package Height0.8
Package Length13
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTBGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)400/Chip
Operating Current (mA)10
Page Read Current (mA)15
Address Bus Width (bit)24/23
Programming Voltage (V)11.4 to 12.6|2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)800000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
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