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M29W128GL90N6E
M29W128GL90N6E
Flash M29W128GL90N6E
Micron Technology
M29W128GL90N6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size16byte
Pin Count56
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed56
Part StatusObsolete
Timing TypeAsynchronous
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)90
Standard Package NameSOP
Location of Boot BlockBottom|Top
Maximum Erase Time (s)400/Chip
Page Read Current (mA)15
Address Bus Width (bit)23
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
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