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M29W256GH70ZS3F TR
M29W256GH70ZS3F TR
Flash M29W256GH70ZS3F TR
Micron Technology
M29W256GH70ZS3F TR
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size8Words/16byte
Pin Count64
AutomotiveYes
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size128Kbyte x 256
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.8
Package Length13
Number of Words32M/16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleNo
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)400/Chip
Operating Current (mA)10
Page Read Current (mA)1
Address Bus Width (bit)25/24
Programming Voltage (V)11.5 to 12.5|2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.2/Byte
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 70ns Automotive 64-Pin Fortified BGA T/R
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