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M29W400DB45ZE6E
M29W400DB45ZE6E
Flash M29W400DB45ZE6E
Micron Technology
M29W400DB45ZE6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 7
Timing TypeAsynchronous
ArchitectureSectored
Package Width6
Interface TypeParallel
Package Height0.9
Package Length8
Number of Words512K/256K
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)4M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)45
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (S)12/Chip
Operating Current (mA)10
Address Bus Width (bit)19/18
Programming Voltage (V)3 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)30000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 4M-bit 512K x 8/256K x 16 45ns 48-Pin TFBGA Tray
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