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M58LT256JST8ZA6E
M58LT256JST8ZA6E
Flash M58LT256JST8ZA6E
Micron Technology
M58LT256JST8ZA6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Bank Size16/16/16/16/16/16/16/16/16/16/16/16/16/16/16/16Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed64
Part StatusUnconfirmed
Sector Size128Kbyte x 255|32Kbyte x 4
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Package Width10
Interface TypeSerial|Parallel
Package Height0.8
Package Length13
Number of Banks16
Number of Words16M
ProgrammabilityYes
Supplier PackageTBGA
Block OrganizationAsymmetrical
Chip Density (bit)256M
Command CompatibleNo
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)85
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)4/Main Block
Operating Current (mA)27
Page Read Current (mA)20
Address Bus Width (bit)24
Programming Voltage (V)1.7 to 2|8.5 to 9.5
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)600(Typ)/Main Block
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 256M-bit 16M x 16 85ns 64-Pin TBGA Tray
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