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M58WR064HB70ZB6E
M58WR064HB70ZB6E
Flash M58WR064HB70ZB6E
Micron Technology
M58WR064HB70ZB6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size4/4/4/4/4/4/4/4/4/4/4/4/4/4/4/4Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words
Pin Count56
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed56
Part StatusObsolete
Sector Size8Kbyte x 8|64Kbyte x 127
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Package Width7.7
Interface TypeParallel|Serial
Package Height0.66
Package Length9
Number of Banks16
Number of Words4M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)20
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (s)4/Main Block
Operating Current (mA)30
Page Read Current (mA)17@66MHz
Address Bus Width (bit)22
Programming Voltage (V)1.7 to 2|11.4 to 12.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)20
Maximum Programming Time (ms)0.1/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 70ns 56-Pin VFBGA Tray
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