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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT25QU02GCBB8E12-0SIT TR
MT25QU02GCBB8E12-0SIT TR
Flash MT25QU02GCBB8E12-0SIT TR
Micron Technology
MT25QU02GCBB8E12-0SIT TR
--
Memory
Flash
MT25QU02GCBB8E12-0SIT TR.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size256byte
Boot BlockYes
ECC SupportNo
Part StatusActive
Sector Size64Kbyte x 4096
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial-SPI
Number of Words2G/1G/512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Max. Access Time (ns)6
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)1/Sector
Operating Current (mA)94
Address Bus Width (bit)32
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)1.8/Page
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial-SPI 1.8V 2G-bit 2G/1G/512M x 1/2-bit/4-bit 6ns 24-Pin TPBGA Tray
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