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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash MT25QU128ABA1ESE-0SIT TR
Micron Technology
MT25QU128ABA1ESE-0SIT TR
--
Memory
Flash
MT25QU128ABA1ESE-0SIT TR.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte
Boot BlockYes
ECC SupportNo
Part StatusActive
Sector Size64Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words128M/64M/32M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)6
Location of Boot BlockBottom|Top
Maximum Erase Time (s)114/Chip
Operating Current (mA)35
Address Bus Width (bit)24
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)2.8/Page
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
1.8V Multiple I/O Serial Flash Memory
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