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MT28EW01GABA1LJS-0SIT
MT28EW01GABA1LJS-0SIT
Flash MT28EW01GABA1LJS-0SIT
Micron Technology
MT28EW01GABA1LJS-0SIT
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTape and Reel|Tray
Page Size16Words/32byte
Pin Count56
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed56
Part StatusActive
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words128M/64M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)100
Maximum Erase Time (s)208(Typ)/Chip
Operating Current (mA)31
Page Read Current (mA)16
Address Bus Width (bit)27
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)20
Maximum Programming Time (ms)0.2/Byte
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 56-Pin TSOP T/R/Tray
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