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MT28F008B3VG-9B
MT28F008B3VG-9B
Flash MT28F008B3VG-9B
Micron Technology
MT28F008B3VG-9B
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)EAR99
PackagingTray
Pin Count40
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed40
Part StatusObsolete
Sector Size128Kbyte x 7|96Kbyte x 1|16Kbyte x 1|8Kbyte x 2
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1(Max)
Package Length10
Number of Words1M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleNo
OE Access Time (ns)40
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)90
Standard Package NameSOP
Location of Boot BlockBottom
Maximum Erase Time (S)14/Main Block
Operating Current (mA)15
Address Bus Width (bit)20
Programming Voltage (V)4.5 to 5.5|3 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)1500(Typ)/Main Block
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel 3.3V 8M-bit 1M x 8 90ns 40-Pin TSOP-I Tray
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