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MT29F128G08AMCABH2-10:A
MT29F128G08AMCABH2-10:A
Flash MT29F128G08AMCABH2-10:A
Micron Technology
MT29F128G08AMCABH2-10:A
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size8Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size1Mbyte x 16384
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words16G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)128G
Command CompatibleNo
Program Current (mA)50
Support of Page ModeNo
Maximum Erase Time (s)0.007/Block
Operating Current (mA)50
Address Bus Width (bit)34
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.56/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA
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