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MT29F128G08CECBBH1-10:B
MT29F128G08CECBBH1-10:B
Flash MT29F128G08CECBBH1-10:B
Micron Technology
MT29F128G08CECBBH1-10:B
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
Page Size8Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size2Mbyte x 8192
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words16G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)128G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeNo
Maximum Erase Time (S)0.012/Block
Operating Current (mA)50
Address Bus Width (bit)35
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 VBGA
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