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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F16G08ABCBBH1-12:B
MT29F16G08ABCBBH1-12:B
Flash MT29F16G08ABCBBH1-12:B
Micron Technology
MT29F16G08ABCBBH1-12:B
--
Memory
Flash
MT29F16G08ABCBBH1-12:B.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size4Kbyte
Pin Count100
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed100
Part StatusObsolete
Sector Size512Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words2G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)16G
Command CompatibleNo
Program Current (mA)50
Support of Page ModeYes
Standard Package NameBGA
Maximum Erase Time (s)0.0035/Block
Operating Current (mA)50
Address Bus Width (bit)1
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel/Serial 3.3V 16G-bit 2G x 8 100-Pin VBGA
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