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MT29F1G08ABAEAWP:E
MT29F1G08ABAEAWP:E
Flash MT29F1G08ABAEAWP:E
Micron Technology
MT29F1G08ABAEAWP:E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusActive
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1(Max)
Package Length12
Number of Words128M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Standard Package NameSOP
Maximum Erase Time (s)0.003/Block
Operating Current (mA)35
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I
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