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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F1G08ABBEAH4-IT:E
MT29F1G08ABBEAH4-IT:E
Flash MT29F1G08ABBEAH4-IT:E
Micron Technology
MT29F1G08ABBEAH4-IT:E
--
Memory
Flash
MT29F1G08ABBEAH4-IT:E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991b.1.a.
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA
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