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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F256G08CKCABH2-10Z:A
MT29F256G08CKCABH2-10Z:A
Flash MT29F256G08CKCABH2-10Z:A
Micron Technology
MT29F256G08CKCABH2-10Z:A
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
Page Size8Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size2Mbyte x 16384
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Interface TypeSerial|Parallel
Number of Words32G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)256G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)20
Maximum Erase Time (S)0.01/Block
Operating Current (mA)50
Address Bus Width (bit)35
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)3000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2.6/Page
Maximum Operating Frequency (MHz)100
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Parallel/Serial 3.3V 256G-bit 32G x 8 20ns 100-Pin TBGA
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