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MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Flash MT29F2G01ABAGDWB-IT:G
Micron Technology
MT29F2G01ABAGDWB-IT:G
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
SVHCYes
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveNo
ECC SupportYes
Part StatusActive
Timing TypeSynchronous
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words2G/1G/512M
ProgrammabilityYes
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)6
Maximum Erase Time (s)0.01/Block
Page Read Current (mA)35
Address Bus Width (bit)24
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 2G-bit 2G/1G/512M x 1/2-bit/4-bit 6ns 8-Pin UPDFN
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