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Flash MT29F2G01ABAGDWB-IT:G TR
Micron Technology
MT29F2G01ABAGDWB-IT:G TR
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Memory
Flash
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant |
| Cell Type | SLC NAND |
| ECCN (US) | 3A991.b.1.a |
| Page Size | 2Kbyte |
| Automotive | No |
| ECC Support | Yes |
| Part Status | Active |
| Timing Type | Synchronous |
| Interface Type | Serial (SPI, Dual SPI, Quad SPI) |
| Number of Words | 2G/1G/512M |
| Programmability | Yes |
| Chip Density (bit) | 2G |
| Command Compatible | No |
| Program Current (mA) | 25 |
| Support of Page Mode | Yes |
| Max. Access Time (ns) | 6 |
| Maximum Erase Time (s) | 0.01/Block |
| Page Read Current (mA) | 35 |
| Address Bus Width (bit) | 24 |
| Number of Bits/Word (bit) | 1/2/4 |
| Minimum Endurance (Cycles) | 100000 |
| Maximum Programming Time (ms) | 0.6/Page |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Description |
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