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MT29F2G08ABAEAH4-AATX:E TR
MT29F2G08ABAEAH4-AATX:E TR
Flash MT29F2G08ABAEAH4-AATX:E TR
Micron Technology
MT29F2G08ABAEAH4-AATX:E TR
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2112byte
AutomotiveYes
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Timing TypeAsynchronous
ArchitectureNon Sectored
Interface TypeParallel
Number of Words256M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)2G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 Automotive 63-Pin VFBGA
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