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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F2G08ABAEAWPITXE
MT29F2G08ABAEAWPITXE
Flash MT29F2G08ABAEAWPITXE
Micron Technology
MT29F2G08ABAEAWPITXE
--
Memory
Flash
MT29F2G08ABAEAWPITXE.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusLTB
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1(Max)
Package Length12
Number of Words256M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Standard Package NameSOP
Maximum Erase Time (S)0.003/Block
Operating Current (mA)35
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
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