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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F2G16ABBEAH4
MT29F2G16ABBEAH4
Flash MT29F2G16ABBEAH4
Micron Technology
MT29F2G16ABBEAH4
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size1KWords
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Maximum Erase Time (S)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)28
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 2G-bit 128M x 16 63-Pin VFBGA Tray
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