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MT29F2G16ABDHC:D TR
MT29F2G16ABDHC:D TR
Flash MT29F2G16ABDHC:D TR
Micron Technology
MT29F2G16ABDHC:D TR
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)18
Maximum Erase Time (s)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)16
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.65
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 2G-bit 128M x 16 18ns 63-Pin VFBGA T/R
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