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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F32G08AECBBH1-12:B
MT29F32G08AECBBH1-12:B
Flash MT29F32G08AECBBH1-12:B
Micron Technology
MT29F32G08AECBBH1-12:B
--
Memory
Flash
MT29F32G08AECBBH1-12:B.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991b.1.a.
Page Size4Kbyte
Pin Count100
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed100
Part StatusObsolete
Sector Size512Kbyte x 8192
Timing TypeAsynchronous
ArchitectureSectored
Package Width12
Interface TypeParallel|Serial
Package Height0.63
Package Length18
Number of Words4G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)32G
Command CompatibleNo
Program Current (mA)50
Support of Page ModeYes
Maximum Erase Time (s)0.0035/Block
Operating Current (mA)50
Address Bus Width (bit)1
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel/Serial 3.3V 32G-bit 4G x 8 100-Pin VBGA
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