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MT29F4G08ABADAWP-E:D
MT29F4G08ABADAWP-E:D
Flash MT29F4G08ABADAWP-E:D
Micron Technology
MT29F4G08ABADAWP-E:D
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.003/Block
Operating Current (mA)35
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.6
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 48-Pin TSOP-I
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