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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F4G08ABAEAH4:E TR
MT29F4G08ABAEAH4:E TR
Flash MT29F4G08ABAEAH4:E TR
Micron Technology
MT29F4G08ABAEAH4:E TR
--
Memory
Flash
MT29F4G08ABAEAH4:E TR.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size4Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusActive
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Standard Package NameBGA
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 63-Pin VFBGA
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