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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F4G08ABAEAWP-IT:E
MT29F4G08ABAEAWP-IT:E
Flash MT29F4G08ABAEAWP-IT:E
Micron Technology
MT29F4G08ABAEAWP-IT:E
--
Memory
Flash
MT29F4G08ABAEAWP-IT:E.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)EAR99
Page Size4Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusActive
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1(Max)
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Standard Package NameSOP
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 48-Pin TSOP
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