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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F4G08ABAFAWP-IT:F
MT29F4G08ABAFAWP-IT:F
Flash MT29F4G08ABAFAWP-IT:F
Micron Technology
MT29F4G08ABAFAWP-IT:F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991b.1.a.
Page Size4Kbyte
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)25
Support of Page ModeYes
Max. Access Time (ns)25
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)17
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 25ns 48-Pin TSOP-I
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