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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F4G08ABBDAH4:D
MT29F4G08ABBDAH4:D
Flash MT29F4G08ABBDAH4:D
Micron Technology
MT29F4G08ABBDAH4:D
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)EAR99
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusActive
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.6
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 512M x 8 63-Pin VFBGA
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