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MT29F4G08BABWP
MT29F4G08BABWP
Flash MT29F4G08BABWP
Micron Technology
MT29F4G08BABWP
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1(Max)
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Process TechnologyCMOS
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)18
Standard Package NameSOP
Maximum Erase Time (s)0.03/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel 3.3V 4G-bit 512M x 8 18ns 48-Pin TSOP-I Tray
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