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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F4G16ABBEAH4-IT:E
MT29F4G16ABBEAH4-IT:E
Flash MT29F4G16ABBEAH4-IT:E
Micron Technology
MT29F4G16ABBEAH4-IT:E
--
Memory
Flash
MT29F4G16ABBEAH4-IT:E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2KWords
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words256M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Standard Package NameBGA
Maximum Erase Time (s)0.01/Block
Operating Current (mA)20
Address Bus Width (bit)29
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 256M x 16 63-Pin VFBGA
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