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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F64G08CBAAAWP-Z:A
MT29F64G08CBAAAWP-Z:A
Flash MT29F64G08CBAAAWP-Z:A
Micron Technology
MT29F64G08CBAAAWP-Z:A
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeMLC NAND
ECCN (US)3A991b.1.a.
PackagingTray
Page Size8Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Timing TypeAsynchronous
ArchitectureNon Sectored
Interface TypeParallel
Number of Words8G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)64G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)10
Address Bus Width (bit)35
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)3000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2.6/Page
Maximum Operating Frequency (MHz)50
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Parallel 3.3V 64G-bit 8G x 8 48-Pin TSOP-I Tray
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