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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F64G08CBCBBH1-10:B
MT29F64G08CBCBBH1-10:B
Flash MT29F64G08CBCBBH1-10:B
Micron Technology
MT29F64G08CBCBBH1-10:B
--
Memory
Flash
MT29F64G08CBCBBH1-10:B.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
Page Size8Kbyte
Pin Count100
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed100
Part StatusObsolete
Sector Size2Mbyte x 4096
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words8G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)64G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeNo
Standard Package NameBGA
Maximum Erase Time (s)0.012/Block
Operating Current (mA)50
Address Bus Width (bit)35
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Parallel/Serial 3.3V 64G-bit 8G x 8 100-Pin VBGA
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