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Flash MT29F8G08ABACAH4-IT:C TR
Micron Technology
MT29F8G08ABACAH4-IT:C TR
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Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
Cell TypeSLC NAND
Page Size4Kbyte
Boot BlockNo
ECC SupportYes
Sector Size256Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words1G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NAND Flash Memory
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