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MT29FEN64GDKCAAXDQ-10:A
MT29FEN64GDKCAAXDQ-10:A
Flash MT29FEN64GDKCAAXDQ-10:A
Micron Technology
MT29FEN64GDKCAAXDQ-10:A
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
Page Size8320byte
AutomotiveNo
ECC SupportYes
Part StatusObsolete
Timing TypeSynchronous
Interface TypeSerial
Number of Words8G
ProgrammabilityYes
Chip Density (bit)64G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)50
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)5000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)20.8/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Serial 3.3V 64G-bit 8G x 8 100-Pin LBGA
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