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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29H16G08ECAH1-12:A
MT29H16G08ECAH1-12:A
Flash MT29H16G08ECAH1-12:A
Micron Technology
MT29H16G08ECAH1-12:A
--
Memory
Flash
MT29H16G08ECAH1-12:A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
Page Size4Kbyte
Pin Count100
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed100
Part StatusObsolete
Sector Size512Kbyte x 4096
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Package Width12
Interface TypeSerial|Parallel
Package Height0.64
Package Length18
Number of Words2G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)16G
Command CompatibleNo
Support of Page ModeYes
Standard Package NameBGA
Maximum Erase Time (S)0.003(Typ)
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.16(Typ)
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel/Serial 3.3V 16G-bit 2G x 8 100-Pin VBGA
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