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N25Q016A11EF640E
N25Q016A11EF640E
Flash N25Q016A11EF640E
Micron Technology
N25Q016A11EF640E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockYes
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size64Kbyte x 32
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.85
Package Length5
Number of Words16M/8M/4M
ProgrammabilityYes
Supplier PackageVPDFN EP
Block OrganizationSymmetrical
Chip Density (bit)16M
Command CompatibleYes
Process Technology65nm
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)7
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)40/Chip
Operating Current (mA)20
Address Bus Width (bit)1
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 16M-bit 16M/8M/4M x 1/2-bit/4-bit 7ns 8-Pin VPDFN EP Tray
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