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N25Q032A11EF640E
N25Q032A11EF640E
Flash N25Q032A11EF640E
Micron Technology
N25Q032A11EF640E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size4Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Package Width5
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.65
Package Length6
Number of Words8M
ProgrammabilityYes
Supplier PackageMLP EP
Block OrganizationSymmetrical
Chip Density (bit)32M
Command CompatibleYes
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)7
Maximum Erase Time (S)60/Chip
Operating Current (mA)20
Address Bus Width (bit)22
Programming Voltage (V)8.5 to 9.5|1.7 to 2
Number of Bits/Word (bit)4
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 32M-bit 8M x 4-bit 7ns 8-Pin MLP EP Tray
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