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N25Q064A11ESECFF TR
N25Q064A11ESECFF TR
Flash N25Q064A11ESECFF TR
Micron Technology
N25Q064A11ESECFF TR
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
Cell TypeNOR
ECCN (US)3A991b.1.a.
AutomotiveNo
Part StatusObsolete
Sector Size64Kbyte x 128
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial
Block OrganizationSymmetrical
Chip Density (bit)64M
Program Current (mA)20
Maximum Erase Time (s)120/Bulk
Operating Current (mA)20
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
IC Flash 64M SPI 108MHz 8SO
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