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N25Q128A11EF840E
N25Q128A11EF840E
Flash N25Q128A11EF840E
Micron Technology
N25Q128A11EF840E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockYes
Lead ShapeNo Lead
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size64Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.95(Max)
Package Length6
Number of Words128M/64M/32M
ProgrammabilityYes
Supplier PackageVPDFN EP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)7
Standard Package NameDFN
Location of Boot BlockBottom|Top
Maximum Erase Time (s)240/Chip
Operating Current (mA)20
Address Bus Width (bit)24
Programming Voltage (V)8.5 to 9.5|1.7 to 2
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)5/Page
Maximum Operating Frequency (MHz)108
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 7ns 8-Pin VPDFN EP Tray
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